Title :
Flip-chip planar GaInAs/InP p-i-n photodiodes analysis of frequency response
Author :
Makiuchi, Masao ; Yano, Mitsuhiro
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
1/1/1996 12:00:00 AM
Abstract :
High-speed response, high-manufacturing-yield photodiodes will be needed for optical interconnection in computer and for broadband networks. Frequency responses of a new planar GaInAs/lnP p-i-n photodiode for flip-chip bonding are analyzed. To study changes caused by the new structure, responses are related to device parameters including photoabsorption layer thickness, p-i-n junction diameter, and the size of the forward biased p-i-n junction. Forward biasing is a peculiarity of our photodiodes. A photodiode with an optimized design showed good characteristics
Keywords :
III-V semiconductors; flip-chip devices; frequency response; gallium arsenide; high-speed optical techniques; indium compounds; light absorption; optical design techniques; optical interconnections; optical planar waveguides; optimisation; p-i-n photodiodes; GaInAs-InP; broadband networks; computer; device parameters; flip-chip bonding; flip-chip planar GaInAs-InP p-i-n photodiodes analysis; forward biased p-i-n junction; frequency response; good characteristics; high-manufacturing-yield photodiodes; high-speed response; optical interconnection; optimized design; p-i-n junction diameter; photoabsorption layer thickness; Bonding; Broadband communication; Computer aided manufacturing; Computer networks; Frequency response; Indium phosphide; Optical computing; Optical interconnections; PIN photodiodes; Voltage;
Journal_Title :
Lightwave Technology, Journal of
