Flip-chip planar GaInAs/InP p-i-n photodiodes analysis of frequency response

Author

Makiuchi, Masao ; Yano, Mitsuhiro

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

14

Issue

1

fYear

1996

fDate

1/1/1996 12:00:00 AM

Firstpage

97

Lastpage

103

Abstract

High-speed response, high-manufacturing-yield photodiodes will be needed for optical interconnection in computer and for broadband networks. Frequency responses of a new planar GaInAs/lnP p-i-n photodiode for flip-chip bonding are analyzed. To study changes caused by the new structure, responses are related to device parameters including photoabsorption layer thickness, p-i-n junction diameter, and the size of the forward biased p-i-n junction. Forward biasing is a peculiarity of our photodiodes. A photodiode with an optimized design showed good characteristics

Keywords

III-V semiconductors; flip-chip devices; frequency response; gallium arsenide; high-speed optical techniques; indium compounds; light absorption; optical design techniques; optical interconnections; optical planar waveguides; optimisation; p-i-n photodiodes; GaInAs-InP; broadband networks; computer; device parameters; flip-chip bonding; flip-chip planar GaInAs-InP p-i-n photodiodes analysis; forward biased p-i-n junction; frequency response; good characteristics; high-manufacturing-yield photodiodes; high-speed response; optical interconnection; optimized design; p-i-n junction diameter; photoabsorption layer thickness; Bonding; Broadband communication; Computer aided manufacturing; Computer networks; Frequency response; Indium phosphide; Optical computing; Optical interconnections; PIN photodiodes; Voltage;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.476142

Filename

476142