Title :
Comparison of coplanar matching networks for V-band amplifiers
Author :
Schefer, M. ; Klepser, B.-U. ; Meier, H.P. ; Patrick, W. ; Lou, U. ; Bachtold, W.
fDate :
8/3/1995 12:00:00 AM
Abstract :
Integrated single-stage amplifiers with different matching networks have been fabricated and compared, using 0.25 μm indium phosphide high electron mobility transistors (InP-HEMT) and gain as high as 9.1 dB at 64 GHz and 10.5 dB at 44 GHz. And a 1 dB compression point of 7.5 dBm have been achieved
Keywords :
HEMT circuits; coplanar waveguides; impedance matching; microwave integrated circuits; millimetre wave amplifiers; 0.25 micron; 44 to 64 GHz; 9.1 to 10.5 dB; HEMT; V-band amplifiers; coplanar matching networks; high electron mobility transistors; integrated single-stage amplifiers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950934
