Title :
MOSFET technology for low-voltage/low-power applications
Author :
Foty, Daniel P. ; Nowak, Edward J.
Author_Institution :
IBM Microelectron. Div., Essex Junction, VT, USA
fDate :
6/1/1994 12:00:00 AM
Abstract :
Certain limits influence MOSFET technology in low-voltage applications. When we reduce the power supply voltage in modern short-channel devices, both active power dissipation and hot carrier reliability improve more than Linearly. However, strong off-state power consumption requirements and increasing numbers of FETs in each integrated circuit, combined with the physical limit to the subthreshold slope, force designers to choose between high performance and high density.<>
Keywords :
insulated gate field effect transistors; power consumption; MOSFET technology; high density; high performance; low-voltage/low-power applications; power supply voltage; CMOS logic circuits; CMOS technology; Energy consumption; FETs; Integrated circuit technology; MOS devices; MOSFET circuits; Power dissipation; Ultra large scale integration; Voltage;
Journal_Title :
Micro, IEEE
