Title :
The fabrication of very narrow self-aligned guard rings around Schottky-barrier diodes
Author :
Levin, R.M. ; Koeneke, C.J.
Author_Institution :
National Semiconductor, Santa Clara, CA
fDate :
3/1/1983 12:00:00 AM
Abstract :
A new method for the fabrication of very narrow self-aligned guard rings around Schottky-barrier diodes is presented. Schottky diodes having the self-aligned guard ring show significant improvements in their reverse characteristics.
Keywords :
Aluminum; Degradation; Delay; Etching; Fabrication; Lithography; Schottky diodes; Semiconductor diodes; Semiconductor films; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21109
