• DocumentCode
    1084916
  • Title

    The fabrication of very narrow self-aligned guard rings around Schottky-barrier diodes

  • Author

    Levin, R.M. ; Koeneke, C.J.

  • Author_Institution
    National Semiconductor, Santa Clara, CA
  • Volume
    30
  • Issue
    3
  • fYear
    1983
  • fDate
    3/1/1983 12:00:00 AM
  • Firstpage
    247
  • Lastpage
    249
  • Abstract
    A new method for the fabrication of very narrow self-aligned guard rings around Schottky-barrier diodes is presented. Schottky diodes having the self-aligned guard ring show significant improvements in their reverse characteristics.
  • Keywords
    Aluminum; Degradation; Delay; Etching; Fabrication; Lithography; Schottky diodes; Semiconductor diodes; Semiconductor films; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21109
  • Filename
    1483010
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1084916