DocumentCode
1084930
Title
Coplanar Ka-band SiGe-MMIC amplifier
Author
Strohm, K.M. ; Luy, J.F. ; Schäffler, F. ; Jorke, H. ; Kibbel, H. ; Rheinfelder, C. ; Doerner, R. ; Gerdes, J. ; Schmückle, F.J. ; Heinrich, W.
Author_Institution
Daimler-Benz AG, Ulm, Germany
Volume
31
Issue
16
fYear
1995
fDate
8/3/1995 12:00:00 AM
Firstpage
1353
Lastpage
1354
Abstract
Design, technology and first results of a coplanar SiGe HBT amplifier monolithically integrated on high resistivity silicon are reported. The circuit provides a gain of 4 dB at 26 GHz
Keywords
Ge-Si alloys; MMIC amplifiers; bipolar MMIC; coplanar waveguides; semiconductor materials; 26 GHz; 4 dB; HBT amplifier; Ka-band; MMIC amplifier; Si; SiGe; coplanar type; high resistivity Si substrate;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950940
Filename
408320
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