Title :
A 4-91-GHz traveling-wave amplifier in a standard 0.12-μm SOI CMOS microprocessor technology
Author :
Plouchart, Jean-Olivier ; Kim, Jonghae ; Zamdmer, Noah ; Lu, Liang-Hung ; Sherony, Melanie ; Tan, Yue ; Groves, Robert A. ; Trzcinski, Robert ; Talbi, Mohamed ; Ray, Asit ; Wagner, Lawrence F.
Author_Institution :
IBM Semicond. R&D Center, Hopewell Junction, NY, USA
Abstract :
This paper presents five-stage and seven-stage traveling-wave amplifiers (TWA) in a 0.12-μm SOI CMOS technology. The five-stage TWA has a 4-91-GHz bandpass frequency with a gain of 5 dB. The seven-stage TWA has a 5-86-GHz bandpass frequency with a gain of 9 dB. The seven-stage TWA has a measured 18-GHz noise figure, output 1-dB compression point, and output third-order intercept point of 5.5 dB, 10 dBm, and 15.5 dBm, respectively. The power consumption is 90 and 130 mW for the five-stage and seven-stage TWA, respectively, at a voltage power supply of 2.6 V. The chips occupy an area of less than 0.82 and 1 mm for the five-stage and seven-stage TWA, respectively.
Keywords :
CMOS integrated circuits; coplanar waveguides; silicon-on-insulator; travelling wave amplifiers; 0.12 micron; 130 mW; 18 GHz; 2.6 V; 4 to 91 GHz; 5 dB; 5 to 86 GHz; 9 dB; 90 mW; CPW transmission line; SOI CMOS microprocessor technology; bandpass frequency; broadband CMOS circuit; high gain bandwidth product; power consumption; traveling-wave amplifier; voltage power supply; CMOS technology; Energy consumption; Frequency; Gain; Microprocessors; Noise figure; Noise measurement; Power supplies; Semiconductor device measurement; Voltage; Broadband CMOS circuit; CPW transmission line; SOI; high gain bandwidth product; traveling waveguide amplifier;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2004.831612