DocumentCode :
1084978
Title :
Temperature behavior of bright luminescence from LPE-grown Ga1-x Alx P structures
Author :
Ermakov, O.N. ; Ignatkina, R.S. ; Karatsyuba, A.P. ; Sushkov, V.P. ; Aksenov, V.F.
Author_Institution :
Ministry of Electronic Industry, Moscow, U.S.S.R.
Volume :
30
Issue :
4
fYear :
1983
fDate :
4/1/1983 12:00:00 AM
Firstpage :
268
Lastpage :
270
Abstract :
Luminescent properties of LPE-grown Ga1-x Alx P ( 
) structures have been studied over a wide temperature range. The complicated character of low-temperature luminescence is attributed to intrinsic and impurity-related recombination. The essential dependence of free exciton recombination upon temperature and composition is established for radiative Ga1-x Alx P structures. Anomalous and normal dependence of radiative efficiency on temperature has been shown to be characteristic of intrinsic and impurity-related luminescence. Thus the temperature dependence of the total luminescence can be controlled simply by varying the donor impurity doping level. LED\´s with luminous intensity 
mcd at 
K have been fabricated from the LPE-grown Ga1-x Alx P p-n structures which have high temperature stability of injection and breakdown luminescence efficiency, and emission band spectral position.
) structures have been studied over a wide temperature range. The complicated character of low-temperature luminescence is attributed to intrinsic and impurity-related recombination. The essential dependence of free exciton recombination upon temperature and composition is established for radiative Ga mcd at K have been fabricated from the LPE-grown GaKeywords :
Current density; Doping; Electric breakdown; Excitons; Impurities; Luminescence; Stability; Temperature control; Temperature dependence; Temperature distribution;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21115
Filename :
1483016
Link To Document :
