Title :
Low threshold voltage ZnSe:Mn thin-film electroluminescent cells prepared by molecular-beam growth method
Author :
Mishima, Tomoyoshi ; Konagai, Makoto ; Takahashi, Koichi ; Takahashi, Kiyoshi
Author_Institution :
Tokyo Institute of Technology, Tokyo, Japan
fDate :
4/1/1983 12:00:00 AM
Abstract :
Au/ZnSe:Mn/n-GaAs and Al/ZnSe:Mn/ITO dc-operated electroluminescent (EL) cells were prepared by molecular-beam epitaxy (MBE) and molecular-beam deposition(MBD), respectively. The threshold voltages achieved in each type of EL cells are lower than any other values reported so far. The ZnSe : Mn layer grown by MBE on a GaAs substrate was single-crystalline while the ZnSe:Mn layer deposited by MBD on an ITO-coated glass substrate was polycrystalline, only
Keywords :
Electroluminescence; Electroluminescent devices; Gallium arsenide; Gold; Indium tin oxide; Molecular beam epitaxial growth; Substrates; Threshold voltage; Transistors; Zinc compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21118
