• DocumentCode
    1085013
  • Title

    Low threshold voltage ZnSe:Mn thin-film electroluminescent cells prepared by molecular-beam growth method

  • Author

    Mishima, Tomoyoshi ; Konagai, Makoto ; Takahashi, Koichi ; Takahashi, Kiyoshi

  • Author_Institution
    Tokyo Institute of Technology, Tokyo, Japan
  • Volume
    30
  • Issue
    4
  • fYear
    1983
  • fDate
    4/1/1983 12:00:00 AM
  • Firstpage
    282
  • Lastpage
    284
  • Abstract
    Au/ZnSe:Mn/n-GaAs and Al/ZnSe:Mn/ITO dc-operated electroluminescent (EL) cells were prepared by molecular-beam epitaxy (MBE) and molecular-beam deposition(MBD), respectively. The threshold voltages achieved in each type of EL cells are lower than any other values reported so far. The ZnSe : Mn layer grown by MBE on a GaAs substrate was single-crystalline while the ZnSe:Mn layer deposited by MBD on an ITO-coated glass substrate was polycrystalline, only
  • Keywords
    Electroluminescence; Electroluminescent devices; Gallium arsenide; Gold; Indium tin oxide; Molecular beam epitaxial growth; Substrates; Threshold voltage; Transistors; Zinc compounds;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21118
  • Filename
    1483019
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1085013