Title :
Properties of p-N and n-N heterointerfaces in GaAs-AlxGa1-xAs heterostructure LED´s
Author :
Li-Sheng Yu ; Wang, Cun-Da
Author_Institution :
Peking University, Peking, China
fDate :
4/1/1983 12:00:00 AM
Abstract :
The V-I characteristics and photoresponse spectra of p-N and n-N GaAs-AlxGa1-xAs heterojunctions have been measured. Experimental results confirmed the existance of energy levels at the heterointerface. From photoresponse spectra the position of the interface levels was determined to be 0.7-0.8 eV below the conduction band of AlGaAs. Some properties of these levels are discussed.
Keywords :
Electrons; Energy states; Gallium arsenide; Heterojunctions; Optoelectronic devices; Physics; Shape measurement; Switches; Time measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21125
