Title :
High-speed GaAs-(GaAl)As DH LED´s with output waveguide structure for optical communications
Author :
Pang, Yongxiu ; Pan, Huizhen ; Cheng, Zongquan ; Shen, Pengnian ; Wu, Guanqun ; Xiao, Zongyao
Author_Institution :
Shanghai Institute of Metallurgy, Shanghai, China
fDate :
4/1/1983 12:00:00 AM
Abstract :
High-speed GaAs-(GaAl)As DH edge-emitting LED´s with an output waveguide structure and a reversed p-n junction for current confinement are described. A cutoff frequency of 115 MHz and a radiance of 1100 W/sr cm2at a diode current of 200 mA have been measured. The output power at the end of a fiber pigtail is about 200 µw with a driving current of 200 mA (core diameter of fiber = 60 µm and numerical aperture NA = 0.2). The coupling efficiency between the diode and a single fiber amounts to 10 percent. Factors affecting both the radiative output and the modulation characteristics are analyzed and discussed.
Keywords :
Current measurement; Cutoff frequency; DH-HEMTs; Diodes; Frequency measurement; Optical fiber communication; Optical waveguides; P-n junctions; Power generation; Waveguide junctions;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21128