DocumentCode :
1085157
Title :
Staircase solid-state photomultipliers and avalanche photodiodes with enhanced ionization rates ratio
Author :
Capasso, Federico ; Tsang, Won-Tien ; Williams, Gareth F.
Author_Institution :
Bell Laboratories, Murray Hill, NJ
Volume :
30
Issue :
4
fYear :
1983
fDate :
4/1/1983 12:00:00 AM
Firstpage :
381
Lastpage :
390
Abstract :
The theory of the staircase avalanche photodiode (APD) is presented and recent results on a new class of APD\´s with enhanced ratio of ionization coefficients are reviewed. The staircase APD consists of a multistage graded gap structure where only electrons ionize; the entire ionization energy is provided by large conduction band steps (dynodes). A general expression for the excess noise factor F in terms of the number of stages and the multiplication per stage is presented. For high ionization yields per dynode the F factor is near unity independently of the number of stages, implying virtually noise free multiplication at high gain similar to a photomultiplier. This cannot be achieved in a conventional APD at high gain even if one of the ionization coefficients is zero. A comparison between the noise behavior of the staircase APD and that of a phototube is also presented. A microscopic theory of the ionization yield γ is discussed; to obtain a high γ electrons must approach the dynode with an energy in the order of ten times the optical phonon energy. The possible problem of residual hole-initiated ionization is also discussed. Formulas for the electron and hole initiated multiplications are derived; from a measurement of these quantities one can directly obtain the ionization yield and the residual hole ionization coefficient. Experimental and theoretical results on other structures (superlattice, channeling, graded gap APD\´s) with high \\alpha /\\beta ratio are also reviewed and design considerations for a long-wavelength multilayer APD are presented.
Keywords :
Avalanche photodiodes; Electron microscopy; Electron optics; Genetic expression; Ionization; Optical microscopy; Optical noise; Photoelectricity; Photomultipliers; Solid state circuits;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21132
Filename :
1483033
Link To Document :
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