DocumentCode
1085164
Title
Dark currents in pin photodetectors fabricated by preprocessing and postprocessing techniques of epitaxial liftoff
Author
Justice, J. ; Corbett, B. ; Walsh, S. ; Considine, L. ; Kelly, W.M.
Author_Institution
Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland
Volume
31
Issue
16
fYear
1995
fDate
8/3/1995 12:00:00 AM
Firstpage
1382
Lastpage
1383
Abstract
A comparison is made between the dark currents in mesa isolated InGaAs pin photodetectors. The detectors are fabricated in three ways: on a substrate, by transfer of fabricated photodetectors onto a silicon substrate, and by fabrication of devices on post-transferred material. A 4×10 array of functioning devices is described
Keywords
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; integrated optoelectronics; optical fabrication; p-i-n photodiodes; photodetectors; vapour phase epitaxial growth; InGaAs; dark currents; epitaxial liftoff; integrated optoelectronics; mesa isolated photodetectors; pin photodetectors; post-transferred material; postprocessing techniques; preprocessing techniques;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950915
Filename
408340
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