Epitaxial liftoff InGaAs/InP MSM photodetectors on Si

Author

Herrscher, M. ; Grundmann, M. ; Dröge, E. ; Kollakowski, St. ; Bottcher, E.H. ; Bimberg, D.

Author_Institution

Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany

Volume

31

Issue

16

fYear

1995

fDate

8/3/1995 12:00:00 AM

Firstpage

1383

Lastpage

1384

Abstract

InGaAs:Fe/InP:Fe metal-semiconductor-metal (MSM) photodetectors for the long wavelength region were transferred by epitaxial liftoff (ELO) techniques onto an Si substrate. The transferred detectors, with a finger spacing and width of 1.5 and 1.0 μm, respectively, showed no deterioration in device performance. A fast impulse response with an FWHM of 23 ps and an external quantum efficiency of 48% was measured at a 7 V bias and 1.3 nm wavelength. The leakage current was 250 nA at a 7 V bias

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; leakage currents; metal-semiconductor-metal structures; photodetectors; semiconductor epitaxial layers; semiconductor growth; transient response; vapour phase epitaxial growth; 1.0 micron; 1.3 nm; 1.5 micron; 23 ps; 250 nA; 48 percent; 7 V; FWHM; InGaAs:Fe-InP:Fe; MSM photodetectors; Si; device performance; epitaxial liftoff; external quantum efficiency; finger spacing; impulse response; leakage current; long wavelength region;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19950910

Filename

408341