Title :
High-speed Ga0.51In0.49P/GaAs heterojunction phototransistors
Author :
Ha, K.H. ; Lee, Y.-H. ; Song, J.I. ; Caneau, C. ; Park, C.Y. ; Park, K.H.
Author_Institution :
Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fDate :
8/3/1995 12:00:00 AM
Abstract :
A high speed Ga0.51In0.49P/GaAs heterojunction phototransistor grown by metal organic vapour phase epitaxy (MOVPE) is reported. High frequency measurements indicate that the device has a cutoff frequency of 1.7 GHz with a 50 Ω output load. The impulse response of the device is measured to be ~60 ps full width at half maximum (FWHM). The phototransistor exhibits an external AC gain of 29 at an incident power of 500 μW
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; phototransistors; semiconductor epitaxial layers; semiconductor growth; transient response; vapour phase epitaxial growth; 1.7 GHz; 50 ohm; 500 muW; 60 ps; Ga0.51In0.49P-GaAs; HBTs; cutoff frequency; external AC gain; full width at half maximum; heterojunction phototransistors; impulse response; incident power; metal organic vapour phase epitaxy; output load;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950889
