DocumentCode
1085202
Title
Novel 1.3 μm MQW light-emission-and-detection diode with flat responsivity characteristics
Author
Suzaki, Y. ; Tohmori, Y. ; Matsumoto, S. ; Kishi, K. ; Yamamoto, M.
Author_Institution
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume
31
Issue
16
fYear
1995
fDate
8/3/1995 12:00:00 AM
Firstpage
1388
Lastpage
1389
Abstract
A novel 1.3 μm MQW light-emission-and-detection diode including a bulk detection layer is proposed for use in time-compression-multiplexing transmission systems. In the lasing mode, this diode has a threshold current of 9 mA at 25°C and a maximum output power of >10 mW at 85°C. In the detection mode, the polarisation dependence of its responsivity, as a detection operation, is <0.5 dB and the wavelength dependence of the responsivity is only 1dB at a wavelength 35 nm longer than the lasing wavelength
Keywords
light polarisation; optical communication equipment; optical fibre subscriber loops; optical links; photodetectors; quantum well lasers; 1.3 micrometre; 25 degC; 85 degC; 9 mA; MQW light-emission-and-detection diode; bulk detection layer; detection mode; flat responsivity characteristics; lasing mode; maximum output power; polarisation dependence; threshold current; time-compression-multiplexing transmission; wavelength dependence;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950926
Filename
408344
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