DocumentCode
1085215
Title
High transconductance normally-off GaN MODFETs
Author
Özgür, A. ; Kim, W. ; Fan, Z. ; Botchkarev, A. ; Salvador, A. ; Mohammad, S.N. ; Sverdlov, B. ; Morkoc, H.
Author_Institution
Mater. Res. Lab., Illinois Univ., Urbana, IL, USA
Volume
31
Issue
16
fYear
1995
fDate
8/3/1995 12:00:00 AM
Firstpage
1389
Lastpage
1390
Abstract
Normally-off GaN based modulation doped field-effect transistors have been fabricated. The extrinsic transconductance of MODFETs with gate and channel lengths of 3 and 5 μm, respectively, is as high as 120 mS/mm. The devices exhibit 300 mA/mm current at a positive gate bias of 3 V. This transconductance value compares very favourably with the 45 mS/mm and 24 mS/mm reported earlier for 1 and 0.23 μm gate devices, respectively
Keywords
III-V semiconductors; gallium compounds; high electron mobility transistors; 120 mS/mm; 3 V; 3 micron; 5 micron; GaN; MODFETs; field-effect transistors; high extrinsic transconductance; modulation doped FET; normallyoff devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950921
Filename
408345
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