DocumentCode :
1085246
Title :
Suppression of bandgap shifts in GaAs/AlGaAs multiquantum wells using hydrogen plasma processing
Author :
Hamilton, C.J. ; Hicks, S.E. ; Vögele, B. ; Marsh, J.H. ; Aitchison, J.S.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume :
31
Issue :
16
fYear :
1995
fDate :
8/3/1995 12:00:00 AM
Firstpage :
1393
Lastpage :
1394
Abstract :
A new method of suppressing the intermixing of GaAs/AlGaAs multiple quantum wells is outlined. The technique involves modifying the native surface oxide of gallium arsenide in a hydrogen plasma to form Ga 2O3. The technique is impurity free, reproducible and area selective
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; hydrogen; plasma applications; semiconductor quantum wells; surface treatment; Ga2O3; GaAs; GaAs-AlGaAs; H plasma processing; MQW waveguides; OEIC; area selective technique; bandgap shifts suppression; multiquantum wells; native surface oxide modification; reproducible method;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19950911
Filename :
408348
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1085246
بازگشت