Title :
Mechanisms of the negative-resistance characteristics in AC thin-film electroluminescent devices
Author :
Yang, Kei-Wean C. ; Owen, S.J.T.
Author_Institution :
Tektronix, Incorporated, Beaverton, OR
fDate :
5/1/1983 12:00:00 AM
Abstract :
A model describing the mechanism responsible for generating the negative-resistance phenomenon found in hysteretic ZnS:Mn ACTFEL devices is presented. This model, which is based on simple physics intuitions rather than elaborate mathematical and numerical analyses, outlines several essential device parameters that are necessary to induce the negative-resistance effect.
Keywords :
Brightness; Character generation; Electroluminescent devices; Hysteresis; Mathematical model; Numerical analysis; Physics; Thin film devices; Voltage; Zinc compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21146
