DocumentCode
1085416
Title
On the relationship between Schottky barrier capacitance and mixer performance at cryogenic temperatures
Author
Romanofsky, Robert R.
Volume
6
Issue
8
fYear
1996
Firstpage
286
Abstract
The flat-band voltage is the Schottky junction voltage required to shrink the depletion width to zero. At cryogenic temperatures, mixer diodes are generally biased and/or pumped beyond the flat-band condition to minimize conversion loss and noise figure. This occurs despite the presumed sharp increase in junction capacitance near flat-band, which should instead limit mixer performance. Past moderate forward bias, the diode C-V relationship is difficult to measure. A simple analytic expression for C(V) is usually used to model and predict mixer performance. This letter provides experimental data on C(V) at 77 K based on a microwave measurement and modeling technique. Data is also provided on the conversion loss of a singly balanced mixer optimized for 77 K operation. The connection between junction capacitance, flat-band potential, and conversion loss is examined. It is shown that the analytic expression greatly overestimates the junction capacitance that occurs as flat-band is approached.
Keywords
Capacitance; Capacitance-voltage characteristics; Cryogenics; Noise figure; Performance analysis; Predictive models; Schottky barriers; Schottky diodes; Temperature; Voltage;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.508555
Filename
508555
Link To Document