• DocumentCode
    1085511
  • Title

    Anomalous in-plane polarization dependence of optical gain in compressively strained GaInAsP-InP quantum-wire lasers

  • Author

    Haque, Anisul ; Maruyama, Takeo ; Yagi, Hideki ; Sano, Takuya ; Dhanorm, Plumwongrot ; Arai, Shigehisa

  • Author_Institution
    Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
  • Volume
    40
  • Issue
    9
  • fYear
    2004
  • Firstpage
    1344
  • Lastpage
    1351
  • Abstract
    In-plane polarization anisotropy of optical gain in compressively strained GaInAsP-InP quantum wire (Q-wire) lasers including elastic strain relaxation induced band mixing is studied. The interaction between two-dimensional (2-D) quantum confinement and elastic strain relaxation effects is found to be complex depending qualitatively also on the wire width. Additional valence band mixing due to strain relaxation has a strong influence on the polarization dependence of optical gain. In the absence of elastic strain relaxation, gain is the maximum for tranverse electric (TE) polarization with the electric field parallel to the wire axis (TE/sub /spl par//), in agreement with the existing theory. On the other hand, when strain relaxation is strong, contrary to the existing theory, valence band mixing causes the gain to be the maximum in TE polarization with the electric field normal to the wire axis (TE/sub /spl perp//). Moreover, Q-wire lasers without suppression of strain relaxation are more likely to exhibit ground-state lasing for TE/sub /spl perp// polarization. These results suggest that in the presence of strong strain relaxation, a laser cavity parallel to the wire axis would provide higher gain. Therefore, the appropriate orientation of the laser cavity in strained GaInAsP-InP Q-wire lasers should be decided after carefully studying the polarization dependence of gain. Our calculation also shows that strong strain relaxation causes in-plane polarization anisotropy to show complex, nonmonotonic dependence on the wire width. Consequently, in such structures, in-plane polarization anisotropy may not be regarded as a direct measure of 2-D confinement effects.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; light polarisation; quantum well lasers; semiconductor quantum wires; GaInAsP-InP; compressively strained GaInAsP-InP quantum-wire lasers; dimensional quantum confinement; elastic strain relaxation induced band mixing; ground-state lasing; in-plane polarization anisotropy; laser cavity; optical gain; transverse electric polarization; Anisotropic magnetoresistance; Capacitive sensors; Geometrical optics; Laser theory; Optical mixing; Optical polarization; Potential well; Two dimensional displays; Wire;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2004.831624
  • Filename
    1327786