Title :
Laser annealing with a 308-nm Xe-Cl pulsed excimer laser
Author :
Hodgson, Robert ; Chou, W. ; McKee, T.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA
fDate :
12/1/1981 12:00:00 AM
Keywords :
Annealing; Heat treatment; Laser beams; Optical pulses; Optical refraction; Power lasers; Pulsed laser deposition; Silicon; Steel; Surface treatment;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1981.1070858