Title :
Highly linear and low noise 2.4 GHz RF front-end circuits using transformer and vertical NPN BJT
Author :
Lee, J. ; Nam, I. ; Cho, S. ; Lee, K.
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon
Abstract :
The proposed RF front-end circuits consist of a low noise amplifier using an on-chip transformer and a downconversion mixer using a parasitic vertical bipolar junction transistor and have been implemented in 0.18 mum deep n-well CMOS process. A gain of 33 dB, an IIP3 of -12 dBm, and a DSB noise figure of 4.5 dB have been achieved while consuming 5 mW from a 1.8 V supply
Keywords :
CMOS integrated circuits; UHF integrated circuits; UHF mixers; bipolar integrated circuits; transformers; 0.18 micron; 1.8 V; 2.4 GHz; 33 dB; 4.5 dB; 5 mW; CMOS process; down conversion mixer; microwave front-end circuits; on-chip transformer; parasitic vertical bipolar junction transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20072779
