Title :
Electron-bombarded semiconductor (EBS) switch
Author :
MacDonald, R. Ian ; Hum, Robert H.
Author_Institution :
Communications Research Centre, Ottawa, Ont., Canada
fDate :
6/1/1983 12:00:00 AM
Abstract :
The swiching of an electron-bombarded semiconductor diode by means of forward bias is demonstrated. With development, such switches may be advantageous for high-power, high-frequency matrix switching. A theoretical argument indicates that isolation similar to that of optoelectronic diode switches without gain can be obtained. Isolation over 30 dB is observed in a simple experiment.
Keywords :
Communication switching; Detectors; Frequency; Optical arrays; Optical modulation; Optical sensors; Optical switches; Photodetectors; Semiconductor diodes; Signal generators;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21177
