Low threshold current high-temperature operation of InGaAs/AlGaAs strained-quantum-well lasers

Author

Derry, P.L. ; Hager, H.E. ; Chiu, K.C. ; Booher, D.J. ; Miao, E.C. ; Hong, C.S.

Author_Institution

Boeing Defense & Space Group, Seattle, WA, USA

Volume

4

Issue

11

fYear

1992

Firstpage

1189

Lastpage

1191

Abstract

The authors report improved high-temperature characteristics for In/sub 0.2/Ga/sub 0.8/As strained-quantum-well ridge waveguide lasers with an optimized cavity design. They have fabricated In/sub 0.2/Ga/sub 0.8/As lasers that operate CW at up to 220 degrees C with over 9-mW output power. At 200 degrees C the threshold current is as low as 15.9 mA for a 400- mu m-long laser with 35/98% reflectivity facets. Optimization of the laser cavity also improves the high-temperature operation of quantum-well lasers in other material systems; GaAs quantum well lasers that operate at up to 220 degrees C CW have been fabricated.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; optimisation; reflectivity; semiconductor lasers; 15.9 mA; 220 degC; 400 micron; 9 mW; CW; InGaAs-AlGaAs; LD; high-temperature operation; laser cavity; laser diodes; optimized cavity design; output power; reflectivity facets; ridge waveguide lasers; semiconductors; strained-quantum-well lasers; threshold current; Design optimization; Indium gallium arsenide; Optical design; Optical materials; Power generation; Power lasers; Quantum well lasers; Reflectivity; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.166937

Filename

166937