Title :
Short wavelength (699 nm) electrically pumped vertical-cavity surface-emitting lasers
Author :
Tell, B. ; Leibenguth, R.E. ; Brown-Goebeler, K.F. ; Livescu, G.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
Abstract :
Room-temperature lasing has been achieved in vertical-cavity surface-emitting laser structures for wavelengths as short as 699 nm under pulsed electrical excitation. The molecular beam epitaxially grown structures have p- and n-type semiconductor quarter wave mirror stacks enclosing an active region containing a short period GaAs-AlAs superlattice.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser accessories; laser cavity resonators; mirrors; semiconductor lasers; 699 nm; IR; MBE growth; active region; electrically pumped; laser structures; molecular beam epitaxially grown structures; n-type; p-type; pulsed electrical excitation; room temperature lasing; semiconductor growth; semiconductor quarter wave mirror stacks; semiconductor superlattices; short period GaAs-AlAs superlattice; vertical-cavity surface-emitting lasers; Laser excitation; Mirrors; Molecular beam epitaxial growth; Optical pulses; Pump lasers; Semiconductor lasers; Semiconductor superlattices; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
