Title :
Nonlinear gain and its influence on the laser dynamics in single-quantum-well lasers operating at the first and second quantized states
Author :
Yao, J. ; Gallion, P. ; Elsasser, W. ; Debarge, G.
Author_Institution :
Dept. Commun., Ecole Nat. Superieure des Telecommun., Paris, France
Abstract :
The gain nonlinearity due to spectral-hole-burning in InGaAs/InP single-quantum-well lasers operating at the first and second quantized states has been investigated by third-order perturbation solution and by strong signal approximation of the density-matrix equations, respectively. Besides the higher differential gain, a smaller nonlinear gain contribution for lasing at the second quantized state is found, as compared to the first quantized state operation; hence, these improved differential gain and nonlinear gain lead to a smaller K factor, defined as the ratio of damping rate to the square of relaxation resonance frequency, and consequently a higher maximum modulation bandwidth.<>
Keywords :
III-V semiconductors; approximation theory; gallium arsenide; indium compounds; laser theory; optical hole burning; perturbation theory; semiconductor lasers; InGaAs-InP; K factor; damping rate; density-matrix equations; differential gain; gain nonlinearity; higher differential gain; higher maximum modulation bandwidth; laser dynamics; nonlinear laser gain; quantized states; relaxation resonance frequency; semiconductors; single-quantum-well lasers; spectral-hole-burning; strong signal approximation; third-order perturbation solution; Equations; High speed optical techniques; Laser modes; Laser theory; Nonlinear optics; Optical modulation; Optical saturation; Quantum well lasers; Resonance; Resonant frequency;
Journal_Title :
Photonics Technology Letters, IEEE
