• DocumentCode
    1085703
  • Title

    InGaAs/GaAs QD-based electro-optic modulator with over 100nm bandwidth at 1.55 μm

  • Author

    Moreau, G. ; Martinez, A. ; Cong, D.-Y. ; Merghem, K. ; Miard, A. ; Lemaitre, A. ; Voisin, P. ; Ramdane, A.

  • Author_Institution
    CNRS, Lab. for Photonics & Nanostruct., Marcoussis
  • Volume
    43
  • Issue
    2
  • fYear
    2007
  • Firstpage
    125
  • Lastpage
    127
  • Abstract
    The potential of an InGaAs/GaAs quantum-dot-based phase modulator for broadband (>100 nm) applications at 1.55 mum is demonstrated. A ~35% enhancement of the phase variation (Vpi ~ 3.5 V for 4 mm-long devices) is achieved compared to that obtained with bulk GaAs waveguides
  • Keywords
    III-V semiconductors; electro-optical modulation; gallium arsenide; indium compounds; phase modulation; semiconductor quantum dots; 1.55 micron; 4 mm; InGaAs-GaAs; electrooptic modulator; phase modulator; phase variation enhancement; semiconductor quantum dots;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20073515
  • Filename
    4084123
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1085703