Title :
Variations of energy-band-diagrams with forward bias voltages for step-like separate-confinement-heterostructure for single-quantum-well lasers
Author :
Lee, Johnson ; Vassell, M.O.
Author_Institution :
GTE Lab., Waltham, MA, USA
Abstract :
The variations of energy-band-diagrams with forward bias voltages for step separate-confinement-heterostructure single quantum-well lasers are investigated by numerically solving the semiconductor device equations with two band parameters described by the generalized Einstein relation and various position-dependent parameters for the materials. The effects of bandgap shrinkage are included. By examining band diagrams, it was found that the potential profiles of the quantum wells with respect to the centers of the wells are: (1) symmetric at high injection; (2) tilted at low injection; and (3) almost flat with reasonable injection. In the intrinsic regions, the difference of the quasi-Fermi potentials can be well approximated by the applied voltage.<>
Keywords :
band structure; laser theory; semiconductor lasers; SCH diode lasers; applied voltage; approximated potentials; band parameters; bandgap shrinkage; energy-band-diagrams; forward bias voltages; generalized Einstein relation; high injection; intrinsic regions; low injection; position-dependent parameters; quasi-Fermi potentials; semiconductor device equations; semiconductors; single-quantum-well lasers; step-like separate-confinement-heterostructure; symmetric; tilted; Charge carrier density; Electrostatics; Photonic band gap; Poisson equations; Quantum well lasers; Radiative recombination; Semiconductor devices; Semiconductor lasers; Stimulated emission; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
