Long-term effects of injected electrons in tunnel oxide on the electrical characteristics of Al gate/thin oxide/Si structures—Relatively low oxide field case

Long-term effects of injected electrons in the tunnel oxide of a MOS structure was investigated. Forward tunneling current characteristics of the structure were not much affected and rather stable. The increase or decrease of reverse current due to long-term injected electrons in the tunnel oxide was found to be caused by the generation or annihilation of interface states by injected electrons.