Title :
Performance limiting micropipe defects in silicon carbide wafers
Author :
Neudeck, Philip G. ; Powell, J.Anthony
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
Abstract :
Reports on the characteristics of a major defect in mass-produced silicon carbide wafers which severely limits the performance of silicon carbide power devices. Micropipe defects originating in 4H- and 6H-SiC substrates were found to cause pre-avalanche reverse-bias point failures in most epitaxially-grown pn junction devices of 1 mm/sup 2/ or larger in area. Until such defects are significantly reduced from their present density (on the order of 100´s of micropipes/cm/sup 2/), silicon carbide power device ratings will be restricted to around several amps or less.<>
Keywords :
p-n homojunctions; power electronics; semiconductor materials; silicon compounds; SiC; defect density; device ratings; epitaxially-grown pn junction devices; micropipe defects; power devices; power semiconductors; pre-avalanche reverse-bias point failures; Breakdown voltage; Conducting materials; Electric breakdown; Power semiconductor devices; Semiconductor diodes; Semiconductor materials; Silicon carbide; Solid state circuits; Substrates; Thermal conductivity;
Journal_Title :
Electron Device Letters, IEEE
