Title :
A GSMBE grown GaInP/GaAs narrow base DHBT exhibiting N-shape negative differential resistance with variable peak-to-valley current ratio up to 1/spl times/10/sup 7/ at room temperature
Author :
Lu, S.S. ; Wang, Y.J.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A Ga/sub 0.51/In/sub 0.49/P/GaAs DHBT with a heavily doped (1/spl times/10/sup 19/ cm/sup /spl minus/3/) narrow base (8 nm) grown by gas source molecular beam epitaxy and fabricated by simple wet chemical etching was demonstrated for the first time. A variable "N" shape negative differential resistance (NDR) controlled by base current was observed in the common-emitter current-voltage characteristics of this device at room temperature. A maximum peak-to-valley current ratio of 1/spl times/10/sup 7/ and a maximum current gain of 83 were achieved at room temperature. The largest peak-to-valley current ratio (1/spl times/10/sup 7/) achieved is, to our knowledge, the highest reported value to date. The NDR characteristics were explained by the base resistance effect.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; negative resistance; semiconductor growth; 8 nm; GSMBE grown; Ga/sub 0.51/In/sub 0.49/P-GaAs; N-shape negative differential resistance; NDR characteristics; base resistance effect; common-emitter I-V characteristics; current-voltage characteristics; double HBT; gas source MBE; heavily doped base; maximum current gain; molecular beam epitaxy; narrow base DHBT; variable peak-to-valley current ratio; wet chemical etching; Chemicals; Conducting materials; Current-voltage characteristics; Fabrication; Gallium arsenide; Heterojunctions; Molecular beam epitaxial growth; Shape control; Temperature control; Wet etching;
Journal_Title :
Electron Device Letters, IEEE
