• DocumentCode
    1085900
  • Title

    Two-dimensional oxidation

  • Author

    Chin, Daeje ; Oh, Soo-Young ; Hu, Shih-ming ; Dutton, Robert W. ; Moll, John L.

  • Author_Institution
    Stanford University, Stanford, CA
  • Volume
    30
  • Issue
    7
  • fYear
    1983
  • fDate
    7/1/1983 12:00:00 AM
  • Firstpage
    744
  • Lastpage
    749
  • Abstract
    This paper introduces the first general two-dimensional oxidation model based on steady-state oxygen diffusion and the slow incompressible viscous flow of oxide. The moving-boundary problem is solved through a novel numerical technique based on pressure/velocity iteration and a boundary-value approach. The simulation results obtained for oxide shape and bird´s beak size versus pad-oxide thickness are in excellent agreement with experiments. This model is also able to calculate stress on the silicon interface during oxidation; this calculated value (6 × 109dyne/cm2) also agrees with the measurement and reveals the tendency of stress to decrease with increasing pad-oxide thickness.
  • Keywords
    Etching; Impurities; Laplace equations; Oxidation; Shape; Silicon; Steady-state; Stress; Two dimensional displays; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21204
  • Filename
    1483105
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1085900