Title :
New progress in the development of a 94-GHz pretuned module silicon IMPATT diode
Author :
Heitzmann, Michel ; Boudot, Marianne
Author_Institution :
Thomson-CSF, Montreuil Sous Bois, France
fDate :
7/1/1983 12:00:00 AM
Abstract :
This paper presents 94-GHz pretuned modules with high efficiency. A description of device process and packaging technology is presented. CW output power levels of 345 mW with gold integrated heat sink and 800 mW with diamond heat sink have been achieved from double-drift IMPATT diodes at frequencies around 94 GHz, simultaneously with an efficiency around 10 percent and a junction temperature of 200-250°C.
Keywords :
Diodes; Epitaxial growth; Gold; Heat sinks; Millimeter wave radar; Millimeter wave technology; Packaging; Power generation; Silicon; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21206
