DocumentCode
1085919
Title
New progress in the development of a 94-GHz pretuned module silicon IMPATT diode
Author
Heitzmann, Michel ; Boudot, Marianne
Author_Institution
Thomson-CSF, Montreuil Sous Bois, France
Volume
30
Issue
7
fYear
1983
fDate
7/1/1983 12:00:00 AM
Firstpage
759
Lastpage
763
Abstract
This paper presents 94-GHz pretuned modules with high efficiency. A description of device process and packaging technology is presented. CW output power levels of 345 mW with gold integrated heat sink and 800 mW with diamond heat sink have been achieved from double-drift IMPATT diodes at frequencies around 94 GHz, simultaneously with an efficiency around 10 percent and a junction temperature of 200-250°C.
Keywords
Diodes; Epitaxial growth; Gold; Heat sinks; Millimeter wave radar; Millimeter wave technology; Packaging; Power generation; Silicon; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21206
Filename
1483107
Link To Document