Title :
Photoresponse model for Si1spl minus/x/Ge/sub x//Si heterojunction internal photoemission infrared detector
Author :
Lin, T.L. ; Park, J.S. ; Gunapala, S.D. ; Jones, E.W. ; Del Castillo, H.M.
Author_Institution :
Center for Space Microelectronics Technol., California Inst. of Technol., Pasadena, CA, USA
fDate :
3/1/1994 12:00:00 AM
Abstract :
A photoresponse model has been developed for the Si1spl minus/x/Ge/sub x//Si heterojunction internal photoemission (HIP) infrared detector at wavelengths corresponding to photon energies less than the Fermi energy. A Si/sub 0.7/Ge/sub 0.3//Si HIP detector with a cutoff wavelength of 23 μm and an emission coefficient of 0.4 eV/sup /spl minus/1/ has been demonstrated. The model agrees with the measured detector response at /spl lambda/>8 μm. The potential barrier determined by the model is in close agreement (difference /spl sim/4 meV) with the potential barrier determined by the Richardson plot, compared to the discrepancies of 20-50 meV usually observed for PtSi Schottky detectors.
Keywords :
Ge-Si alloys; elemental semiconductors; infrared detectors; photoemission; photoemissive devices; semiconductor device models; silicon; 23 micron; Richardson plot; Si/sub 1/spl minus/x/Ge/sub x//Si; SiGe-Si; cutoff wavelength; detector response; emission coefficient; heterojunction internal photoemission; infrared detector; photon energies; photoresponse model; potential barrier; Electromagnetic wave absorption; Heterojunctions; Hip; Infrared detectors; Microelectronics; Photoelectricity; Propulsion; Silicides; Space technology; Wavelength measurement;
Journal_Title :
Electron Device Letters, IEEE
