Title :
Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors
Author :
Welser, J. ; Hoyt, J.L. ; Gibbons, J.F.
Author_Institution :
Solid State Electron. Lab., Stanford Univ., CA, USA
fDate :
3/1/1994 12:00:00 AM
Abstract :
Enhanced performance is demonstrated in n-type metal-oxide-semiconductor field-effect transistors with channel regions formed by pseudomorphic growth of strained Si on relaxed Si/sub 1/spl minus/x/Ge/sub x/. Standard MOS fabrication techniques were utilized, including thermal oxidation of the strained Si. Surface channel devices show low-field mobility enhancements of 80% at room temperature and 12% at 10 K, when compared to control devices fabricated in Czochralski Si. Similar enhancements are observed in the device transconductance. In addition, buried channel devices show peak room temperature mobilities about three times that of control devices.<>
Keywords :
Ge-Si alloys; carrier mobility; insulated gate field effect transistors; oxidation; semiconductor growth; semiconductor materials; silicon; 10 K; MOS fabrication techniques; Si-SiGe; buried channel devices; channel regions; device transconductance; low-field mobility enhancements; n-type metal-oxide-semiconductor field-effect transistors; pseudomorphic growth; room temperature mobilities; surface channel devices; thermal oxidation; Atomic force microscopy; Electron mobility; Epitaxial layers; FETs; Fabrication; MOSFET circuits; Oxidation; Strain control; Temperature control; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
