Title :
AlGaAs/GaAs/AlGaAs DHBT´s for high-temperature stable circuits
Author :
Fricke, K. ; Hartnagel, H.L. ; Lee, W.Y. ; Schussler, Martin
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, Germany
fDate :
3/1/1994 12:00:00 AM
Abstract :
High-temperature devices are required for a large number of industrial applications. In order to demonstrate the feasibility of a high temperature operating circuit on GaAs an operational amplifier was designed and fabricated. A corresponding technology for transistors and circuits for operation up to 300/spl deg/C with AlGaAs/GaAs/AlGaAs DHBT´s is presented. For the amplifier circuit an open loop gain of 49.5 dB at room temperature and 35.8 dB at 200/spl deg/C was measured, which is in good agreement with the circuit simulation. High temperature stability has been proven by a storage test at 400/spl deg/C over 1000 h for the ohmic contact metallization and 200 h for the transistors.<>
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; high-temperature techniques; integrated circuit testing; linear integrated circuits; metallisation; operational amplifiers; 1000 h; 20 to 300 C; 200 h; 35.8 dB; 400 C; 49.5 dB; AlGaAs-GaAs-AlGaAs; AlGaAs/GaAs/AlGaAs DHBTs; GaAs; circuit simulation; high temperature stability; high-temperature stable circuits; industrial applications; ohmic contact metallization; open loop gain; operational amplifier; storage test; Circuit simulation; Circuit stability; Circuit testing; DH-HEMTs; Gain measurement; Gallium arsenide; Metallization; Ohmic contacts; Operational amplifiers; Temperature;
Journal_Title :
Electron Device Letters, IEEE
