High efficiency GaInAs/InP heterojunction IMPATT diodes

Author

De Jaeger, Jean-Claude ; Kozlowski, Romain ; Salmer, Georges

Author_Institution

Université des Sciences et Techniques de Lille I, Villeneuve d´´Ascq Cedex, France

Volume

30

Issue

7

fYear

1983

fDate

7/1/1983 12:00:00 AM

Firstpage

790

Lastpage

796

Abstract

Heterojunction IMPATT diodes make it possible to produce new high conversion efficiency devices, combining a low bandgap semiconductor for the avalanche zone with a large bandgap material for the drift region. In this study, the heterojunction GaInAs/InP which seems particularly attractive is used in various structures. The theoretical predictions of performances are determined by a computer simulation which takes into account the main limitation effects of IMPATT diodes and the influence of particular physical phenomena due to the use of heterojunctions and semiconductors, mainly the influence of injection currents. Potential performances of the proposed structure appear very attractive especially in the millimeter-wave range using a MITATT mode (Mixed-Tunneling-Avalanche-Transit-Time) by combining tunneling current and avalanche multiplication injections.

Keywords

Conducting materials; Gallium arsenide; Heterojunctions; Indium phosphide; Ionization; Photonic band gap; Read only memory; Semiconductor device doping; Semiconductor diodes; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1983.21211

Filename

1483112