Comparison of the sensitivity to heavy ions of SRAM´s in different SIMOX technologies

Author

Ferlet-Cavrois, V. ; Musseau, O. ; Leray, J.L. ; Coïc, Y.M. ; Lecarval, G. ; Guichard, E.

Author_Institution

CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France

Volume

15

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

82

Lastpage

84

Abstract

We propose a simple model to evaluate the sensitivity to heavy ions of SRAM´s in different CMOS/SIMOX technologies. The critical Linear Energy Transfer LETc and the asymptotic cross section /spl sigma/ characterize the sensitivity of a memory. Theoretical values of LETc and /spl sigma/ are calculated according to intrinsic characteristics of the technology (thickness of the silicon layer, lateral bipolar amplification) and design parameters of the memory, LETc and /spl sigma/ are then compared to experiments.<>

Keywords

CMOS integrated circuits; SIMOX; SRAM chips; ion beam effects; 16 kbit; 64 kbit; CMOS/SIMOX technology; LETc; SRAM; Si layer thickness; critical linear energy transfer; heavy ion sensitivity; lateral bipolar amplification; memory design parameters; model; CMOS technology; Capacitance; Electronic components; Energy exchange; MOS devices; Pulp manufacturing; Random access memory; Semiconductor device modeling; Silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.285395

Filename

285395