DocumentCode
1086026
Title
The impact of scaling-down oxide thickness on poly-Si thin-film transistors´ I-V characteristics
Author
Lin, Pole-Shang ; Li, To-Sing
Author_Institution
Submicron Technol. Div., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Volume
15
Issue
4
fYear
1994
fDate
4/1/1994 12:00:00 AM
Firstpage
138
Lastpage
139
Abstract
The key factors reducing the fluctuations of poly-Si I-V fluctuations are investigated. Besides the trapping states at the grain boundary, the oxide thickness plays an important role in poly-Si characteristics. Scaling down the oxide thickness will improve both poly-Si performance and I-V uniformity.<>
Keywords
electron traps; elemental semiconductors; grain boundaries; hole traps; insulated gate field effect transistors; silicon; thin film transistors; I-V fluctuations; Si-SiO/sub 2/; TFT; grain boundary; oxide thickness; poly-Si; polycrystalline Si; polysilicon; scaling-down; thin-film transistor; trapping states; Analytical models; CMOS technology; Fluctuations; Grain boundaries; Grain size; Passivation; Semiconductor device modeling; Thin film transistors; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.285404
Filename
285404
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