Random telegraph signals in accumulation-mode SOI/nMOSFETs

Author

Tsai, Ming-Horn ; Zhang, Binglong ; Ma, Tso-Ping ; Wang, L.K.

Author_Institution

Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA

Volume

15

Issue

4

fYear

1994

fDate

4/1/1994 12:00:00 AM

Firstpage

135

Lastpage

137

Abstract

Random telegraph signals (RTS´s) arising from interfacial defects in small accumulation-mode SOI/nMOSFETs have been studied. By analyzing the average capture time of each RTS as a function of both the front-gate and back-gate voltages, the authors are able to distinguish between defects at the front interface from those at the back interface. In contrast to the RTS´s typically observed in enhancement-mode MOSFETs where only those interfacial defects within an energy range close to the Si band edge can be measured, the use of the accumulation-mode SOI/nMOSFET makes it possible to probe interface traps near midgap.<>

Keywords

defect electron energy states; electron traps; insulated gate field effect transistors; semiconductor-insulator boundaries; silicon; average capture time; back-gate voltages; front-gate voltages; interface traps; interfacial defects; midgap; random telegraph signals; small accumulation-mode SOI/nMOSFETs; Current measurement; Energy measurement; Fluctuations; Fluid flow measurement; MOSFETs; Microelectronics; Probes; Semiconductor materials; Telegraphy; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.285405

Filename

285405