• DocumentCode
    1086063
  • Title

    Ion implanted Si MESFET´s with high cutoff frequency

  • Author

    Fernholz, Gabi ; Beneking, Heinz

  • Author_Institution
    Technical University, Aachen, Federal Republic of Germany
  • Volume
    30
  • Issue
    7
  • fYear
    1983
  • fDate
    7/1/1983 12:00:00 AM
  • Firstpage
    837
  • Lastpage
    840
  • Abstract
    A new technology of ion-implanted silicon MESFET\´s on high-resistivity substrates has been developed to reduce substrate effects. Consequently, the devices show an improved static behavior concerning pinchoff and drain feedback. Static and dynamic performance will be presented, the latter showing f_{\\max }=14 GHz calculated from scattering parameter measurements and a large signal switching time of 60 ps. The transit frequency of the intrinsic device is f_{T} \\sim 3.9 GHz.
  • Keywords
    Boron; Cutoff frequency; FETs; Feedback; MESFETs; Parasitic capacitance; Scattering parameters; Silicon; Substrates; Time measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1983.21218
  • Filename
    1483119
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1086063