Title :
Enhancement of oxide break-up by implantation of fluorine in poly-Si emitter contacted p/sup +/-n shallow junction formation
Author :
Wu, Shye Lin ; Lee, Chung Len ; Lei, Tan Fu ; Chen, C.F. ; Chen, L.J. ; Ho, K.Z. ; Ling, Y.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
4/1/1994 12:00:00 AM
Abstract :
In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p/sup +/-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900/spl deg/C. As a result, the junction depth of the BF/sub 2/-implanted device is much larger than that of the boron-implanted device.<>
Keywords :
annealing; elemental semiconductors; fluorine; ion implantation; p-n junctions; semiconductor doping; silicon; 900 C; BF/sub 2/-implanted device; F implantation; Si:BF/sub 2/-Si; annealing temperature; junction depth; oxide break-up; p/sup +/-n shallow junction formation; poly-Si emitter; poly-Si/Si interfacial oxide; polysilicon; polysilicon/Si interfacial oxide; Annealing; BiCMOS integrated circuits; Boron; Contacts; Diodes; Electric resistance; Physics; Tail; Temperature; Ultra large scale integration;
Journal_Title :
Electron Device Letters, IEEE
