Proposal for Q-Modulated Semiconductor Laser

Author

He, Jian-Jun

Author_Institution

Dept. of Opt. Eng., Zhejiang Univ., Hangzhou

Volume

19

Issue

5

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

285

Lastpage

287

Abstract

A novel structure and mechanism for high-speed modulation of semiconductor lasers are proposed and analyzed. The modulator consists of an antiresonant cavity acting as a rear reflector of the laser. The change of the absorption coefficient in the modulator results in a change in the reflectivity of the rear reflector, and consequently the Q-factor, the lasing threshold, and the output power. An implementation structure and numerical results for a Q-modulated distributed feedback laser are presented. The monolithically integrated Q-modulated laser has potential advantages of high speed, low wavelength chirp, high extinction ratio, and high power efficiency

Keywords

Q-factor; absorption coefficients; distributed feedback lasers; integrated optoelectronics; laser cavity resonators; monolithic integrated circuits; optical modulation; reflectivity; semiconductor lasers; Q-factor; Q-modulated laser; absorption coefficient; antiresonant cavity; distributed feedback laser; extinction ratio; high-power-efficiency laser; high-speed laser; high-speed modulation; laser rear reflector; low-wavelength-chirp laser; monolithic integration; reflectivity; semiconductor laser; Absorption; Chirp modulation; Distributed feedback devices; Laser feedback; Power generation; Power lasers; Proposals; Q factor; Reflectivity; Semiconductor lasers; $Q$-modulated laser (QML); Intensity modulation; semiconductor laser; wavelength chirp;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.891242

Filename

4084550