Cladding Layer Impedance Reduction to Improve Microwave Propagation Properties in p-i-n Waveguides

Author

Lin, Fang-Zheng ; Chiu, Yi-Jen ; Wu, Tsu-Hsiu

Author_Institution

Inst. of Electro-Opt. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung

Volume

19

Issue

5

fYear

2007

fDate

3/1/2007 12:00:00 AM

Firstpage

276

Lastpage

278

Abstract

The cladding layer effect on microwave propagation properties of semiconductor p-i-n waveguides is investigated in this letter. Through the optical excitation in quantum wells of p-i-n waveguides, high-speed photocurrent is used to examine the microwave propagation. Two devices of p-i-n waveguides with different cladding layers are fabricated and measured, showing that a higher speed is found in the waveguide of wider cladding width. Verified by the microwave propagation properties, the higher speed is mainly attributed to lower microwave propagation loss due to the lower impedance in the wider cladding layer, suggesting this kind of structure can be applied to high-speed waveguide-based devices

Keywords

claddings; high-speed optical techniques; integrated optics; integrated optoelectronics; microwave photonics; microwave propagation; optical waveguides; quantum well devices; cladding layer impedance reduction; high-speed devices; high-speed photocurrent; microwave propagation; optical excitation; p-i-n waveguides; quantum wells; waveguide-based devices; High speed optical techniques; Impedance; Microwave devices; Microwave propagation; Optical propagation; Optical waveguides; PIN photodiodes; Photoconductivity; Semiconductor waveguides; Velocity measurement; Cladding layer; high speed; microwave propagation loss; optical–electrical (OE) response; p-i-n waveguide; semiconductor; undercut etching;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.890044

Filename

4084551