Title :
A base-band NDS electrode configuration for HACT devices
Author :
Carroll, Roger D. ; Merritt, Sears W. ; Branciforte, Emilio J. ; Tanski, William J. ; Cullen, Donald E. ; Sacks, Robert N.
Author_Institution :
United Technol. Res. Center, East Hartford, CT, USA
fDate :
5/1/1994 12:00:00 AM
Abstract :
Heterostructure Acoustic Charge Transport (HACT) devices have been fabricated with a new nondestructive sense (NDS) electrode structure that provides for the recovery of base-band signals without the use of an integrating capacitor. This electrode structure provides an output signal comprising an RF carrier at the SAW frequency, amplitude modulated by the sampled input signal which has been delayed by a period proportional to the output electrodes distance from the input diode. The output of the NDS electrode structure is subsequently demodulated to provide the base-band signal.<>
Keywords :
acoustic charge transport devices; frequency response; piezoelectric semiconductors; surface acoustic wave devices; HACT devices; RF carrier; SAW frequency; base-band NDS electrode configuration; heterostructure acoustic charge transport devices; nondestructive sense electrode; output electrodes distance; sampled input signal; Acoustic devices; Amplitude modulation; Capacitors; Delay; Diodes; Electrodes; Frequency modulation; RF signals; Radio frequency; Surface acoustic waves;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
