• DocumentCode
    1086330
  • Title

    A High-Speed Variation-Tolerant Interconnect Technique for Sub-Threshold Circuits Using Capacitive Boosting

  • Author

    Kil, Jonggab ; Gu, Jie ; Kim, Chris H.

  • Author_Institution
    Intel Corp., Folsom
  • Volume
    16
  • Issue
    4
  • fYear
    2008
  • fDate
    4/1/2008 12:00:00 AM
  • Firstpage
    456
  • Lastpage
    465
  • Abstract
    This paper describes an interconnect technique for subthreshold circuits to improve global wire delay and reduce the delay variation due to process-voltage-temperature (PVT) fluctuations. By internally boosting the gate voltage of the driver transistors, operating region is shifted from subthreshold region to super-threshold region enhancing performance and improving tolerance to PVT variations. Simulations of a clock distribution network using the proposed driver shows a 66%-76% reduction in 3sigma clock skew value and 84%-88% reduction in clock tree delay compared to using conventional drivers. A 0.4-V test chip has been fabricated in a 0.18-mum 6-metal CMOS process to demonstrate the effectiveness of the proposed scheme. Measurement results show 2.6times faster switching speed and 2.4times less delay sensitivity under temperature variations.
  • Keywords
    CMOS integrated circuits; integrated circuit interconnections; CMOS process; capacitive boosting; conventional drivers; delay variation; driver transistors; gate voltage boosting; global wire delay; high-speed variation-tolerant interconnect technique; process-voltage-temperature fluctuations; size 0.18 mum; subthreshold circuits; Capacitive boosting; clock distribution network; global wire delay; subthreshold circuits;
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2007.915455
  • Filename
    4459695