DocumentCode
1086330
Title
A High-Speed Variation-Tolerant Interconnect Technique for Sub-Threshold Circuits Using Capacitive Boosting
Author
Kil, Jonggab ; Gu, Jie ; Kim, Chris H.
Author_Institution
Intel Corp., Folsom
Volume
16
Issue
4
fYear
2008
fDate
4/1/2008 12:00:00 AM
Firstpage
456
Lastpage
465
Abstract
This paper describes an interconnect technique for subthreshold circuits to improve global wire delay and reduce the delay variation due to process-voltage-temperature (PVT) fluctuations. By internally boosting the gate voltage of the driver transistors, operating region is shifted from subthreshold region to super-threshold region enhancing performance and improving tolerance to PVT variations. Simulations of a clock distribution network using the proposed driver shows a 66%-76% reduction in 3sigma clock skew value and 84%-88% reduction in clock tree delay compared to using conventional drivers. A 0.4-V test chip has been fabricated in a 0.18-mum 6-metal CMOS process to demonstrate the effectiveness of the proposed scheme. Measurement results show 2.6times faster switching speed and 2.4times less delay sensitivity under temperature variations.
Keywords
CMOS integrated circuits; integrated circuit interconnections; CMOS process; capacitive boosting; conventional drivers; delay variation; driver transistors; gate voltage boosting; global wire delay; high-speed variation-tolerant interconnect technique; process-voltage-temperature fluctuations; size 0.18 mum; subthreshold circuits; Capacitive boosting; clock distribution network; global wire delay; subthreshold circuits;
fLanguage
English
Journal_Title
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher
ieee
ISSN
1063-8210
Type
jour
DOI
10.1109/TVLSI.2007.915455
Filename
4459695
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