Title :
A general solution method for two-dimensional nonplanar oxidation
Author :
Chin, Daeje ; Oh, Soo-Young ; Dutton, Robert W.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
fDate :
9/1/1983 12:00:00 AM
Abstract :
Two-dimensional oxidation is a moving-boundary problem involving steady-state oxidant diffusion and incompressible viscous flow. To solve the kinetic equations for the two-dimensional oxidation model, this work introduces a general numerical method that combines pressure/ velocity iteration with a boundary-value technique.
Keywords :
Atomic layer deposition; Chemical elements; Chemical technology; Equations; Etching; Kinetic theory; Oxidation; Shape; Silicon; Steady-state;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1983.21252
