DocumentCode :
1086434
Title :
Vectorized Monte Carlo calculation for the transport of ions in amorphous targets
Author :
Petersen, Wesley P. ; Fichtner, Wolfgang ; Grosse, Eric H.
Author_Institution :
Bell Laboratories, Murray Hill, NJ
Volume :
30
Issue :
9
fYear :
1983
fDate :
9/1/1983 12:00:00 AM
Firstpage :
1011
Lastpage :
1017
Abstract :
This paper describes the vectorized implantation of a Monte Carlo technique to simulate the transport of energetic ions in amorphous targets. Utilizing the vector processing capabilities of a CRAY-1 computer, we have achieved speed-up factors between three to ten over equivalent scalar implementations. The method has been successfully applied to simulate typical ion-implant conditions in modern silicon device processing.
Keywords :
Amorphous materials; Computational modeling; Implants; Ion implantation; Lithography; Monte Carlo methods; Semiconductor device modeling; Semiconductor materials; Solids; Substrates;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21255
Filename :
1483156
Link To Document :
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