DocumentCode
1086453
Title
Semiconductor device simulation
Author
Fichtner, Wolfgang ; Rose, Donald J. ; Bank, Randolph E.
Author_Institution
Bell Laboratories, Murray Hill, NJ
Volume
30
Issue
9
fYear
1983
fDate
9/1/1983 12:00:00 AM
Firstpage
1018
Lastpage
1030
Abstract
The most effective way to design VLSI device structures is to use sophisticated, complex two-dimensional (2D) and three-dimensional (3D) models. This paper and its companion [1] discusses the numerical simulation of such device models. Here we describe the basic semiconductor equations including several choices of variables. Our examples illustrate results obtained from finite-difference and finite-element implementations. We stress the necessary 3D calculations for small-size MOSFET´s. Numerical results on inter-electrode capacitive coupling are included.
Keywords
Circuit simulation; Costs; Coupling circuits; Nonlinear equations; Numerical simulation; Partial differential equations; Robustness; Semiconductor devices; Testing; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21256
Filename
1483157
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