DocumentCode :
108646
Title :
Dual-State Absorber-Photocurrent Characteristics and Bistability of Two-Section Quantum-Dot Lasers
Author :
Breuer, Stefan ; Rossetti, M. ; Drzewietzki, Lukas ; Montrosset, I. ; Krakowski, M. ; Hopkinson, Mark ; Elsasser, W.
Author_Institution :
Inst. of Appl. Phys., Tech. Univ. Darmstadt, Darmstadt, Germany
Volume :
19
Issue :
5
fYear :
2013
fDate :
Sept.-Oct. 2013
Firstpage :
1
Lastpage :
9
Abstract :
The peculiar behavior of the absorber photocurrent of two-section quantum-dot lasers with different gain-bandwidth chirping is studied numerically and by experiments. By biasing the absorber section of a strongly chirped laser with a self-generated positive voltage or with a reverse-bias, different emission-state lasing regimes also involving a smooth emission-state-transition from quantum-dot ground-state to excited state via simultaneous ground- and excited-state are observed. The gradual emission state and photocurrent transitions are simulated and are in excellent agreement with experiments. In contrast, in a medium-chirped laser a photocurrent and emission-state bistability with hysteresis is experimentally observed involving a transition from sole ground state to sole excited state. Thereby, no intermediate simultaneous dual-state emission regimes occur suggesting the exclusion of simultaneous dual-state emission and bistability. This peculiar bistable behavior is explained qualitatively and offers the potential to be exploited toward switching applications.
Keywords :
laser stability; light absorption; optical bistability; photoconductivity; photoemission; quantum dot lasers; absorber section; bistable behavior; dual-state absorber-photocurrent characteristics; dual-state emission; emission-state bistability; emission-state lasing regimes; emission-state-transition; excited state; gain-bandwidth chirping; gradual emission state; laser bistability; medium-chirped laser; photocurrent transitions; quantum-dot ground-state; reverse-bias; self-generated positive voltage; strongly chirped laser; two-section quantum-dot lasers; Quantum dots; semiconductor device modeling; semiconductor lasers;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2013.2255264
Filename :
6488712
Link To Document :
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